Indium and gallium on Si(001): A closer look at the parallel dimer structure

被引：88

作者：

Evans, MMR

Nogami, J ^{[1
]}

机构：

[1] Michigan State Univ, Dept Mech & Mat Sci, E Lansing, MI 48824 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.59.7644

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium and gallium have been shown to self-assemble on the surface of Si(001) into long single atom wide chains in a structure known as the parallel dimer structure. Previous theoretical studies of the similar Al/Si(001) system have calculated the energy of the structure, simulated scanning tunneling microscopy (STM) images,and proposed a nucleation mechanism for row growth. These proposals are compared with STM data for In and Ga. [S0163-1829(99)10711-2].

引用

页码：7644 / 7648

页数：5

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