Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

被引：137

作者：

Duan, Chun-Gang ^{[1
,2
]}

Velev, Julian P. ^{[1
,3
]}

Sabirianov, R. F. ^{[3
,4
]}

Mei, W. N. ^{[3
,4
]}

Jaswal, S. S. ^{[1
,3
]}

Tsymbal, E. Y. ^{[1
,3
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] E China Normal Univ, Key Lab Polarized Mat & Dev, Shanghai 200062, Peoples R China

[3] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[4] Univ Nebraska, Dept Phys, Omaha, NE 68182 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2901879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a Fe/BaTiO3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTiO3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage. (C) 2008 American Institute of Physics.

引用

页数：3

共 31 条

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