Recrystallization of MeV Si implanted 6H-SiC

被引：33

作者：

Harada, S ^{[1
]}

Ishimaru, M ^{[1
]}

Motooka, T ^{[1
]}

Nakata, T ^{[1
]}

Yoneda, T ^{[1
]}

Inoue, M ^{[1
]}

机构：

[1] ION ENGN RES INST CORP,HIRAKATA,OSAKA 57301,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 23期

关键词：

D O I：

10.1063/1.117236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microstructures of recrystallized layers in 8 MeV Si3+ ion implanted 6-H-SiC (0001) wafers have been characterized by means of transmission electron microscopy. Epitaxial recrystallization of buried amorphous layers was observed at annealing temperature as low as 1000 degrees C, Layer-by-layer epitaxy of 6H-SiC initially occurred and it was changed to columnar growth when layer-by-layer growth exceeded 100 nm in thickness. From the microdiffraction analysis, it was found that the columnar regions are defected 6H-SiC with crystal orientations different from the substrate. In addition to 6H-SiC, epitaxial 3C-SiC was also confirmed in the recrystallized layer. Based on these results, we have proposed a structure model of the recrystallized layer in which stacking faults in the columnar regions are induced by mismatched connections between the columnar and layered 6H-SiC regions. (C) 1996 American Institute of Physics.

引用

页码：3534 / 3536

页数：3

共 8 条

[1]

Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[2] COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY ION IRRADIATION [J].