Monte Carlo simulation of electron transport in 4H-SiC using a two-band model with multiple minima

被引:71
作者
Nilsson, HE
Sannemo, U
Petersson, CS
机构
[1] KTH,DEPT SOLID STATE ELECT,S-16440 KISTA,SWEDEN
[2] MID SWEDEN UNIV,DEPT MATH & PHYS,S-85170 SUNDSVALL,SWEDEN
关键词
D O I
10.1063/1.363249
中图分类号
O59 [应用物理学];
学科分类号
摘要
A Monte Carlo study of the high-field electron transport in 4H-SiC is presented using a new analytic band model, The band model consists of two analytical bands that include band bending at the Brillouin zone boundaries, The band bending is very important in 4H-SiC and SH-SiC and has to be taken into account in order to have an accurate model at high electric fields. Numerical calculation of the density of states given by the new model has been used in order to model the energy dependence of the scattering mechanisms accurately. The new model predicts a lower saturation velocity in the c direction (peak velocity 1.8X10(7) cm/s) than in perpendicular directions (peak velocity 2.1X10(7) cm/s). This is directly related to the strong band bending in the c direction. This effect is also responsible for a much more pronounced velocity peak in the c direction compared to perpendicular directions, In the low-field region the mobility is higher in the c direction (mobility ratio near 0.8), which is in agreement with experimental results, (C) 1996 American Institute of Physics.
引用
收藏
页码:3365 / 3369
页数:5
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