Modification of indium tin oxide for improved hole injection in organic light emitting diodes

被引：7

作者：

Shen, YL

Jacobs, DB

Malliaras, GG ^{[1
]}

Koley, G

Spencer, MG

Ioannidis, A

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Xerox Corp, Corp Strateg Serv, Webster, NY 14580 USA

来源：

ADVANCED MATERIALS | 2001年 / 13卷 / 16期

关键词：

D O I：

10.1002/1521-4095(200108)13:16<1234::AID-ADMA1234>3.0.CO;2-R

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Modification of indium tin oxide (ITO) electrode interface for improved hole injection in organic light emitting diodes (OLED) was investigated. The injection efficiency measurements were carried out to characterize contact between ITO and the organic semiconductor triphenyldiamine (TDP) layer. Coating of ITO with self-assembled ultrathin platinum (Pt) films as interface modification layers, dramatically enhances OLED efficiency and contact with TDP becomes nearly ohmic. The surface morphology of ITO electrodes was investigated by atomic force microscopy (AFM).

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页码：1234 / 1238

页数：5

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