Some challenges for mask making to keep up with the roadmap

This paper discusses the need for additional mask quality factors for implementation into a further roadmap. These factors are expected to affect the printed image on wafer. Especially the global idea of pattern fidelity is introduced. Low voltage scanning electron microscopy can offer the capability to mask makers to deliver this extra information. This knowledge should lead to a better understanding how mask imperfections may contribute to the overall lithography error budget. This understanding will need to rely on stronger collaboration between mask maker and mask user. Using simulation data and the so-called mask error factor, it is shown that certain mask strategies may allow larger mask error budgets.