Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

被引：43

作者：

Kerlau, M

Merdrignac-Conanec, O ^{[1
]}

Guilloux-Viry, M

Perrin, A

机构：

[1] Univ Rennes 1, Inst Chim Rennes, Lab Verres & Ceram, CNRS,UMR 6512, F-35042 Rennes, France

[2] Univ Rennes 1, Inst Chim Rennes, Chim Solide & Inorgan Mol Lab, CNRS,UMR 6511, F-35042 Rennes, France

来源：

SOLID STATE SCIENCES | 2004年 / 6卷 / 01期

关键词：

TaON; Ta3N5; Ta2O5; synthesis; nitridation; thin film; pulsed laser deposition;

D O I：

10.1016/j.solidstatesciences.2003.10.010

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

TaON and Ta3N5 thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600-800 degreesC temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). (C) 2003 Elsevier SAS. All rights reserved.

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页码：101 / 107

页数：7

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