Multicomponent zone melting growth of ternary InGaAs bulk crystal

被引：32

作者：

Suzuki, T

Nakajima, K

Kusunoki, T

Katoh, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

InGaAs; multicomponent zone melting growth; photoluminescence (PL); ternary bulk crystal;

D O I：

10.1007/BF02666602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InxGa1-xAs crystals with x = 0.25-0.08 have been successfully grown on GaAs seeds by a method of multicomponent zone melting growth. Its alloy composition is found to be controlled by the growth temperature. Within an ingot, a good uniformity in the alloy composition along the direction normal to the growth is also achieved. The alloy composition gradually changes along the growth direction in the ingot, and this change is well explained by a temperature profile in the growth furnace.

引用

页码：357 / 361

页数：5

共 9 条

[1]

[Anonymous], UNPUB

[2]

BONNER WA, 1988, I PHYS C SER, V96, P337

[3] MOTION OF LIQUID ALLOY ZONES ALONG BAR UNDER INFLUENCE OF ELECTRIC CURRENT [J].