Direct electronic transport through an ensemble of InAs self-assembled quantum dots

被引:25
作者
Jung, SK
Hwang, SW [1 ]
Choi, BH
Kim, SI
Park, JH
Kim, Y
Kim, EK
Min, SK
机构
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
[2] KIST, Semicond Mat Res Ctr, Seoul 130650, South Korea
[3] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul, South Korea
关键词
D O I
10.1063/1.122996
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots. (C) 1999 American Institute of Physics. [S0003-6951(99)01605-8].
引用
收藏
页码:714 / 716
页数:3
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