Wetting and reactive thin film growth

被引：13

作者：

Pavlovska, A ^{[1
]}

Bauer, E ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

SURFACE SCIENCE | 2001年 / 480卷 / 03期

关键词：

gallium; gallium nitride; epitaxy; wetting; low-energy electron microscopy (LEEM); low energy electron diffraction (LEED);

D O I：

10.1016/S0039-6028(01)00827-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The wetting process of the GaN(0 0 0 1) surface by Ga is studied in situ in real time by low energy electron microscopy and diffraction. The reversibility of the phase transitions in the wetting layer is examined in detail and the consequences for the growth of GaN layers by reaction with ammonia and activated nitrogen are discussed. It is concluded that the growth of smooth (0 0 0 1)-terminated GaN layers may be considered as quasi-liquid phase epitaxy. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：128 / 136

页数：9

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