Preparation conditions of chromium doped ZnSe and their infrared luminescence properties

被引：60

作者：

Burger, A ^{[1
]}

Chattopadhyay, K

Ndap, JO

Ma, X

Morgan, SH

Rablau, CI

Su, CH

Feth, S

Page, RH

Schaffers, KI

Payne, SA

机构：

[1] Fisk Univ, Ctr Photon Mat & Devices, Dept Phys, Nashville, TN 37208 USA

[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[3] NASA, George C Marshall Space Flight Ctr, Micrograv Sci & Applicat Dept, Sci Directorate SD 47, Huntsville, AL 35812 USA

[4] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 225卷 / 2-4期

关键词：

diffusion; doping; growth from vapor; zinc compounds; semiconducting II-VI materials; solid state lasers;

D O I：

10.1016/S0022-0248(01)00845-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 mus were measured for samples with Cr2+ concentrations from low 10(17) to high 10(18)cm(-3) range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(19) cm(-3). (C) 2001 Elsevier Science B.V. Ah rights reserved.

引用

页码：249 / 256

页数：8

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