Mid-IR interband cascade lasers: Progress toward high performance

被引：2

作者：

Bruno, JD ^{[1
]}

Yang, RQ ^{[1
]}

Bradshaw, JL ^{[1
]}

Pham, JT ^{[1
]}

Wortman, DE ^{[1
]}

机构：

[1] USA, Res Labs, Adelphi, MD 20783 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS V | 2001年 / 4287卷

关键词：

D O I：

10.1117/12.429783

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-H quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we review our recent progress in InAs GaInSb type-H IC lasers at emission wavelengths of 3.6-4 tm. These semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., similar to 56 A/cm(2) at 80 K) and power efficiency exceeding 14% were observed from mesa-stripe lasers when operated in cw mode. Also, these lasers were able to operate at temperatures up to similar to 252 K in pulsed mode and similar to 142 K in cw mode. We observed slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%, from devices at temperatures above 80 K. A peak output power of similar to 6 W/facet was observed from an IC laser at 80 K.

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页码：1 / 12

页数：12

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