Linking chemical reactivity, magic numbers, and local electronic properties of clusters

被引:19
作者
Alfonso, DR [1 ]
Wu, SY
Jayanthi, CS
Kaxiras, E
机构
[1] Univ Louisville, Dept Phys, Louisville, KY 40292 USA
[2] Abdus Salaam Int Ctr Theoret Phys, Condensed Matter Sect, I-34100 Trieste, Italy
[3] Univ Louisville, Dept Phys, Louisville, KY 40292 USA
[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1103/PhysRevB.59.7745
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interplay of local energetics, local electron occupancies, and local density of states is the key to the understanding of chemical reactivity. We define local measures, within a nonorthogonal tight-binding scheme, which clearly and unambiguously determine these local properties for an aggregate of atoms, such as a solid or a cluster. Using these measures, we identify the electronic level mechanisms responsible for the chemical reactivity of dusters of different sizes. A clear and concise picture of why Si,, is chemically inert while Si-49A is reactive emerges from this analysis. A scheme for quantifying the dangling bonds is also presented in this work. [S0163-1829(99)01511-8].
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收藏
页码:7745 / 7750
页数:6
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