Physical properties of reactive sputtered tin-nitride thin films

被引：74

作者：

Inoue, Y ^{[1
]}

Nomiya, N ^{[1
]}

Takai, O ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

VACUUM | 1998年 / 51卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(98)00271-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the physical properties of tin-nitride thin films deposited onto glass substrates by rf reactive sputtering. The crystal structure of the tin-nitride films is hexagonal and the lattice parameters are calculated from X-ray diffraction patterns as a = 0.369 nm and c = 0.529 nm. X-ray photoelectron spectroscopy reveals the bonding states af the polycrystalline tin-nitride films. Photoelectron lines and Auger lines are discussed in detail. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：673 / 676

页数：4

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