Self-powered high performance photodetectors based on CdSe nanobelt/graphene Schottky junctions

被引：114

作者：

Jin, Weifeng ^{[1
,2
]}

Ye, Yu ^{[1
,2
]}

Gan, Lin ^{[3
]}

Yu, Bin ^{[1
,2
]}

Wu, Peicai ^{[1
,2
]}

Dai, Yu ^{[1
,2
]}

Meng, Hu ^{[1
,2
]}

Guo, Xuefeng ^{[3
]}

Dai, Lun ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 07期

基金：

中国国家自然科学基金;

关键词：

ULTRAVIOLET PHOTODETECTORS; HIGH-QUALITY; NANOTUBE; FILMS;

D O I：

10.1039/c2jm15913a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-powered photodetectors based on CdSe nanobelt (NB)/graphene Schottky junctions are fabricated and investigated. Typically such Schottky junctions exhibit good rectifying behavior without light illumination. The on/off ratio is more than 1 x 10(5) when the voltage changes from -1 to 1 V. Under zero bias, typically such photodetectors show high photosensitivity (similar to 3.5 x 10(5)), which is defined as (I-photo - I-dark)/I-dark, to above-band-gap irradiation. Under 1000 Hz light switching frequency, the response and recovery times of such photodetector are typically 82 and 179 ms, respectively, and the photoconductive gain is 28, greater than unity. The high photosensitivity and gain, as well as fast response speed, guarantee the feasibility of such self-powered photodetectors.

引用

页码：2863 / 2867

页数：5

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