Mechanism of copper underpotential deposition at Pt(hkl)-electrodes:: Quantum-chemical modelling

被引:15
作者
Danilov, A. I. [1 ]
Nazmutdinov, R. R. [2 ]
Zinkicheva, T. T. [2 ]
Molodkina, E. B. [1 ]
Rudnev, A. V. [1 ]
Polukarov, Yu. M. [1 ]
Feliu, J. M. [3 ]
机构
[1] Russian Acad Sci, Frumkin Inst Phys Chem & Electrochem, Moscow 119991, Russia
[2] Kazan State Technol Univ, Kazan 420015, Tatarstan, Russia
[3] Univ Alicante, Inst Electrochem, E-03080 Alicante, Spain
基金
俄罗斯基础研究基金会;
关键词
Pt(hkl); copper; adatoms; monoatomic (100) and (111) steps; kinks; quantum-chemical modelling;
D O I
10.1134/S1023193508060104
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Mechanism of copper underpotential deposition at stepped faces of platinum single crystals Pt(hkl) is studied using cyclic voltammetry, scanning probe microscopy, and quantum-chemical modelling. It is shown that the first stage of UPD is one-dimensional decoration of the (100)- or (110)-orientated steps, then copper monolayer forms at (111)-terraces. The final stage is the secondary step decoration. Quantum-chemical modelling, with the using of long-distance potentials of the Cu-Pt and Cu-Cu pair interactions, allows estimating the energy of copper adsorption at different structure elements of the substrate (steps, kinks, terraces) and revealing the succession of the adatom monolayer formation; it also provides additional information for the identifying of the nature of voltametric peaks for different stages of the copper adsorption-desorption.
引用
收藏
页码:697 / 708
页数:12
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