Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

被引：17

作者：

Kan, EWH

Choi, WK

Leoy, CC

Chim, WK

Antoniadis, DA

Fitzgerald, EA

机构：

[1] Singapore MIT Alliance, Singapore 117576, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[3] MIT, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1608480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than 900 degreesC. The improved crystallinity of the nanodots synthesized via the double-step annealing process was investigated using Raman spectroscopy and transmission electron microscopy diffraction patterns. A mechanism of growth at different annealing temperature profiles is proposed. The optimum annealing profile was 1000 degreesC for 300 s followed by 700 degreesC for 60 s. The mean diameter of the dots at such annealing condition was found to be 9.5+/-1.6 nm with an area density of similar to5x10(11) cm(-2). (C) 2003 American Institute of Physics.

引用

页码：2058 / 2060

页数：3

共 9 条

[1] Microstructural characterization of rf sputtered polycrystalline silicon germanium films [J].