Growth, characterization and spectroscopic investigations of InI crystals for optical and radiation detector applications

被引：2

作者：

Mandal, KC ^{[1
]}

Klugerman, M ^{[1
]}

Cirignano, LJ ^{[1
]}

Moy, LP ^{[1
]}

Shah, KS ^{[1
]}

Squillante, MR ^{[1
]}

Bhattacharyya, RN ^{[1
]}

机构：

[1] Radiat Monitoring Devices Inc, Watertown, MA 02172 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single crystals of InI (E-g = 2.01 eV at 300K) have been grown by vertical Bridgman technique using zone refined (ZR) starting materials. The quality of the grown crystal has been evaluated by X-ray diffraction (XRD), Electron probe microanalysis (EPMA) and Photoelectron spectroscopy (XPS). Chemically etched crystal wafer has been used to fabricate optical and nuclear detectors. The results are presented in this paper.

引用

页码：597 / 604

页数：8