Synthesis, microstructure, and electrical properties of the delafossite compound CuGaO2

被引:33
作者
Gall, RB [1 ]
Ashmore, N [1 ]
Marquardt, MA [1 ]
Tan, XL [1 ]
Cann, DP [1 ]
机构
[1] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
基金
美国国家科学基金会;
关键词
semiconductors; electronic transport; electrode materials; scanning and transmission electron microscopy; X-ray diffraction;
D O I
10.1016/j.jallcom.2004.08.070
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electrical properties and microstructural characteristics of solid-state synthesized CuGaO2 ceramics were investigated. Undoped CuGaO2 ceramics exhibited p-type conductivity with a Seebeck coefficient of 780 mu V/K and a room temperature conductivity of 0.0033 S/cm. Examination of the microstructure of CuGaO2 Ceramics revealed the existence of thin laminar twins oriented along the {0 0 0 1} basal plane with thickness varying from several to several tens of nanometers. Doping with Ni2+ and Mg2+ did not result in a significant increase in conductivity and doping with Sn4+ resulted in a remarkable decrease in conductivity. With evidence from diffraction data on Sn-doped ceramics, it is proposed that the Sn4+ was ionically compensated with Cu vacancies. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:262 / 266
页数:5
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