Dependence of the cut off frequency on Ge profiles, base and collector widths in SiGe HBTs

被引：1

作者：

Mau, H ^{[1
]}

Nuernbergk, D ^{[1
]}

Schwierz, F ^{[1
]}

Rossberg, M ^{[1
]}

Paasch, G ^{[1
]}

Schipanski, D ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Dept Solid State Elect, D-98684 Ilmenau, Germany

来源：

ICCDCS 98: PROCEEDINGS OF THE 1998 SECOND IEEE INTERNATIONAL CARACAS CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS | 1998年

关键词：

D O I：

10.1109/ICCDCS.1998.705800

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The dynamic performance of SiGe HBTs in terms of the cut off frequency is investigated by numerical device simulation, Simulations using both the drift diffusion and the energy transport model are carried out for a variety of different HBT structures, Based on the simulation results, design criteria for SiGe HBT are derived, Limits of the validity of the drift. diffusion model are discussed.

引用

页码：33 / 36

页数：4