Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy

被引：55

作者：

Ritter, Kyle A. ^{[1
,2
]}

Lyding, Joseph W. ^{[1
,3
]}

机构：

[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 01期

关键词：

D O I：

10.1088/0957-4484/19/01/015704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2 x 1:H surface. Room temperature, ultrahigh vacuum tunneling spectroscopy measurements of nanometer-sized single layer graphene reveal a size-dependent energy gap ranging from 0.1 to 1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunneling microscopy topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics.

引用

页数：6

共 33 条

[1] Scanning tunnelling spectroscopy and ab initio calculations of single-walled carbon nanotubes interfaced with highly doped hydrogen-passivated Si(100) substrates [J].