Reduced leakage current in La and Ni codoped BiFeO3 thin films

被引：163

作者：

Singh, S. K. ^{[1
]}

Maruyama, K.

Ishiwara, H.

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Engn Sci, Yokohama, Kanagawa 2268503, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Engn Sci, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2784968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La (2.5%) and Ni (2.5%) codoped BiFeO3 (BLFNO) thin films were formed by chemical solution deposition on Pt/Ti/SiO2/Si(100) structures. BiFeO3 (BFO), La(5%)-doped BFO, and Ni(5%)-doped BFO films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was single perovskite phase, however, structural modifications were observed in La-doped films. The leakage current density at 500 kV/cm was reduced by approximately three orders of magnitude by codoping La and Ni atoms, compared with BFO films. In BLFNO films, well saturated remanent polarization of 70 mu C/cm(2) was obtained at room temperature at 10 kHz with the reduced coercive field by approximately 30%.

引用

页数：3

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