Layer by layer growth of Bi2Te3 epitaxial thermoelectric heterostructures

被引：7

作者：

Boikov, YA ^{[1
]}

Danilov, VA ^{[1
]}

Claeson, T ^{[1
]}

Erts, D ^{[1
]}

机构：

[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.666981

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Epitaxial films of n- and p-type (0001)Bi2Te3 with carrier concentrations between 1x10(18) and 8x10(19) cm(-3) have been grown by hot wall epitaxy at the surface of mica. Granular textured films have been grown on barium fluorine substrates. A regular system of growth steps of 1 nm height was observed at the surface of the Bi2Te3 films grown on mica at 600K. The spirals ( m approximate to 10(6) cm(-2)) were detected by AFM at the surface of the thermoelectric films when substrate temperature was increased to 640K. Steps at the surface of freshly cleaved BaF2 substrate promote the formation of a grains in the Bi2Te3 film and rough surface. The alpha (2) sigma for the Bi2Te3 films with electron and hole conductance at 300K was in the range 40-60 mu Wcm(1)K(-2).

引用

页码：89 / 92

页数：4