Phase change super resolution near field structure ROM

被引：7

作者：

Kim, H ^{[1
]}

Hwang, I ^{[1
]}

Kim, J ^{[1
]}

Park, C ^{[1
]}

Ro, M ^{[1
]}

Lee, J ^{[1
]}

Jung, M ^{[1
]}

Park, I ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Digital Media R&D Ctr, Suwon 442742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 5B期

关键词：

super-RENS; ROM; red laser system; phase change material; readout stability;

D O I：

10.1143/JJAP.44.3605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We confirmed a super resolution phenomenon and a typical super resolution near field structure threshold phenomenon in a read only memory (ROM)-type sample disk. We found that this super resolution phenomenon originates from a phase-change layer and is closely related to the thermal properties of the super resolution layer. We also improved the readout stability using a co-sputtered layer with phase change (GST) and dielectric materials (ZnS-SiO2).

引用

页码：3605 / 3608

页数：4

共 7 条

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