Inhomogeneous and homogeneous linewidths in Er3+-doped chalcogenide glasses

被引:17
作者
Bigot, L
Jurdyc, AM
Jacquier, B
Adam, JL
机构
[1] Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Mat Luminescents,, F-69622 Villeurbanne, France
[2] Univ Rennes 1, CNRS, UMR 6512, Lab Verres & Ceram, F-35042 Rennes, France
关键词
D O I
10.1016/S0925-3467(03)00111-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The erbium I-4(13/2)-I-4(15/2) transition around 1.5 mum is of prim interest for telecommunications and depends on the erbium ions surrounding. In glasses, the broadening of a transition comes from two contributions: inhomogeneous (due to the disorder) and homogeneous (due to the electron phonon interaction) broadening. Resonant Fluorescence Line Narrowing (RFLN) is a useful tool to separate this two parameters. We will show in this paper that the I-4(13/2)-I-4(15/2) transition in chalcogenide glass (GeGaSSb) presents a strong homogeneous character and a smaller inhomogeneous contribution compared to aluminosilicate and fluoride glasses. Consequences on gain saturation will also be discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:97 / 102
页数:6
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