Hydrogen induced Si surface segregation on Ge-covered Si(001)

被引：60

作者：

Rudkevich, E ^{[1
]}

Liu, F ^{[1
]}

Savage, DE ^{[1
]}

Kuech, TF ^{[1
]}

McCaughan, L ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.81.3467

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. First-principles calculations confirm a thermodynamic driving force for this place exchange. To explain the intriguing kinetics of the place exchange, which shows no time dependence, we propose a dimer-vacancy diffusion-assisted mechanism limited by vacancy interactions. [S0031-9007(98)07429-8].

引用

页码：3467 / 3470

页数：4

共 32 条

[1] Adsorption of hydrogen on a Ge covered Si(100) surface [J].