Luminescence and physical properties of copper doped CdO derived nanostructures

被引:115
作者
Benhaliliba, M. [1 ]
Benouis, C. E. [1 ]
Tiburcio-Silver, A. [2 ]
Yakuphanoglu, F. [3 ]
Avila-Garcia, A. [4 ]
Tavira, A. [4 ]
Trujillo, R. R. [5 ]
Mouffak, Z. [6 ]
机构
[1] Oran Univ Sci & Technol, Fac Sci, Dept Phys, Oran, Algeria
[2] ITT DIEE, Mexico City 52176, DF, Mexico
[3] Firat Univ, Dept Phys, Fac Sci & Arts, TR-23119 Elazig, Turkey
[4] Cinvestav IPN, Dept Ingn Elect SEES, Mexico City 07000, DF, Mexico
[5] Ctr Invest & Dispositivos Semiconductores BUAP, Cu Puebla, Pue, Mexico
[6] Calif State Univ Fresno, Dept Elect & Comp Engn, Fresno, CA 93740 USA
关键词
CdO thin films; Spin-coating; Sol-gel; Crystalline structure; Cu doping; Photoluminescence; OXIDE THIN-FILMS; SOL-GEL METHOD; CADMIUM-OXIDE; SPRAY-PYROLYSIS; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; DEPOSITION; ZNO; XPS;
D O I
10.1016/j.jlumin.2012.03.044
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we studied the photoluminescence (PL), the morphological, electrical and optical properties of pure and copper-doped cadmium oxide. CdO films were grown by a facile sal-gel spin coating process at 1200 rpm, and doped with copper at 2 and 3%. A (1 1 1)-oriented cubic structure with a lattice parameter of a=4.69 angstrom was confirmed by X-ray diffraction. Copper was shown to improve the optical transmittance in the short wavelength range of the visible spectrum. The optical band gap of CdO ranged between 2.49 and 2.62 eV as a result of Cu content. At room temperature, resistance fell drastically with Cu doping levels. AFM analysis of samples exhibited nano-mounts and nanowires. Finally, PL results showed a strong blue-violet emission peak at 2.80 eV. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:2653 / 2658
页数:6
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