GaAs surface modifications under Au evaporating flux

被引:14
作者
Lioubtchenko, DV
Markov, IA
Briantseva, TA
机构
[1] Helsinki Univ Technol, Radio Lab, FIN-02015 Espoo, Finland
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 141190, Russia
关键词
GaAs; Au; thermal evaporation; SAW;
D O I
10.1016/S0169-4332(03)00356-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Au films thermally evaporated in vacuum are different from pure Au. New compounds as Au3Ga, Au7Ga2 are formed during the evaporation and "free" (non-incorporated into the crystalline lattice) Ga and As atoms appear in the Au surface layer. In this work the GaAs surface state was investigated with surface acoustic waves in situ during thermal evaporation of Au. The changes of the aggregate state caused by the Au-Ga liquid phase formation followed by the creation of the solid solutions based on the Au3Ga and the Au7Ga2 compounds are observed. Such transformations in the films seem to be determined by the diffusion of "free" Ga and As atoms towards the GaAs surface due to the plastic deformation induced by the Au evaporated flux. Data were confirmed by the precise chemical analysis and Auger electron spectroscopy. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:335 / 340
页数:6
相关论文
共 10 条
[1]   ALLOYED OHMIC CONTACTS TO GAAS [J].
BRASLAU, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807
[2]   Process-induced modification to the surface of crystalline GaAs measured by photometry [J].
Briantseva, TA ;
Lebedeva, ZM ;
Markov, IA ;
Bullough, TJ ;
Lioubtchenko, DV .
APPLIED SURFACE SCIENCE, 1999, 143 (1-4) :223-228
[3]   SAW diagnostics of GaAs surface structure [J].
Briantseva, TA ;
Bullough, TJ ;
Lioubtchenko, DV ;
Markov, IA ;
Tolmachev, EM .
PHYSICA B, 1999, 263 :84-86
[4]  
BRIANTSEVA TA, 1996, APPL SURF SCI, V100, P169
[5]  
BRIANTSEVA TA, SCI TECHNOLOGY MILLI
[6]  
LEUNG S, 1985, J ELECTROCHEM SOC, V132, P898, DOI 10.1149/1.2113981
[7]   GaAs surface modifications under light irradiation in vacuum [J].
Lioubtchenko, DV ;
Markov, IA ;
Briantseva, TA .
APPLIED SURFACE SCIENCE, 2002, 195 (1-4) :42-47
[8]  
LIOUBTCHENKO DV, 2001, P WOCSDICE 2001 IT
[9]  
PLUSCHEV VE, 1976, CHEM TECHNOLOGY RA 1
[10]  
Shur M., 1987, GaAs Devices and Circuits