Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications

被引：15

作者：

Aliberti, P. ^{[1
]}

Shrestha, S. K. ^{[1
]}

Teuscher, R. ^{[1
]}

Zhang, B. ^{[1
]}

Green, M. A. ^{[1
]}

Conibeer, G. J. ^{[1
]}

机构：

[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 11期

关键词：

Energy selective contacts; Photoluminescence; Hot carriers solar cells; Silicon quantum dots; Double resonant tunneling; NANOCRYSTALS;

D O I：

10.1016/j.solmat.2010.06.024

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Structures consisting of a single layer of silicon quantum dots in silicon dioxide matrix represent a promising approach to implement energy selective contacts for hot carrier solar cells. The opening of the band gap and the resonant tunneling effect allow extraction of carriers within a narrow tunable range of energies. In this work, several silicon quantum dots double barrier structures have been realized using RF-magnetron co-sputtering. Quantum confinement properties of silicon quantum dots and the influence of the annealing process duration on crystallization have been investigated using photoluminescence measurements. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1936 / 1941

页数：6

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