On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's

被引：17

作者：

Menozzi, R ^{[1
]}

Borgarino, M

van der Zanden, K

Schreurs, D

机构：

[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy

[2] IMEC, MAP CSE, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, ESAT TELEMIC, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 04期

关键词：

FET's; high-speed circuits/devices; microwave FET's; millimeter-wave FET's; MODFET's; reliability;

D O I：

10.1109/55.753750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By comparing devices with different recess widths, we show that the off-state drain-gate breakdown voltage (BVDG) may give totally misleading indications on the reliability of lattice-matched InP HEMT's under hot-electron (HE) and impact ionization conditions, from both standpoints of gradual and catastrophic degradation. Since the hot-electron degradation effects observed in our HEMT's are quite common, we believe that our results should be considered as a general caveat whenever indications on HE HEMT robustness are inferred from BVDG measurements.

引用

页码：152 / 154

页数：3

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