A 600V 200A low loss high current density trench IGBT for hybrid vehicles

被引：16

作者：

Hamada, K ^{[1
]}

Kushida, T ^{[1
]}

Kawahashi, A ^{[1
]}

Ishiko, M ^{[1
]}

机构：

[1] Toyota Motor Co Ltd, Elect Engn Div 3, Toyota 47003, Japan

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

We developed a new low loss high destruction immunity 600V 200A trench IGBT for hybrid vehicles. In order to secure high destruction immunity at high current density use caused by chip shrink, we designed a process and a cell on the basis of results of both simulation and 2.5mm square TEGs (Test Element Groups) experimental results. A 4 mum trench pitch, punch-through wafer structure, and local lifetime technology are employed. As a result, the developed IGBT shows an on-state voltage drop of 1.55V, a fall time of 800ns, an avalanche capability of over IJ(at R.T.), and a short circuit immunity of over 40us. The IGBT is fitted with both a temperature sensor and a current sensor in order to avoid chip failure.

引用

页码：449 / 452

页数：4