Problems of the nanoimprinting technique for nanometer scale pattern definition

被引:141
作者
Scheer, HC
Schulz, H
Hoffmann, T
Torres, CMS
机构
[1] Berg Univ Gesamthsch Wuppertal, Dept Elect Engn, D-42097 Wuppertal, Germany
[2] Berg Univ Gesamthsch Wuppertal, Dept Elect Engn, D-42097 Wuppertal, Germany
[3] Berg Univ Gesamthsch Wuppertal, Inst Math Sci, D-42097 Wuppertal, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期
关键词
D O I
10.1116/1.590436
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have tested nanoimprint lithography, a new and promising technique for nanometer-scale pattern definition. Preliminary experiments reveal that, besides severe sticking and adhesion problems, the problem of material transport is one inherent to this technique. There are clear indications that most of the effects found may be understood in terms of material transport. We performed experiments within a well defined pressure and temperature window which ranged from 60 to 100 bar and from 50 to 90 degrees C above the glass transition temperature of the poly(methylmethacrylate)-like polymer used. As a result, the quality of imprint is evaluated with respect to full area pattern transfer, based on a qualitative scanning electron microscope investigation of the fully imprinted area of 2 cm x 2 cm patterned with features of different size and shape. Optimum conditions for imprint quality are found around 100 bar and 90 degrees C above T-g for the specific polymer used. Although material transport will limit nanoimprint performance in general, it is found that periodic patterns and isolated or small area negative stamp relief patterns are most suitable for high quality nanoimprinting. (C) 1998 American Vacuum Society. [S0734-211X(98)04006-2].
引用
收藏
页码:3917 / 3921
页数:5
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