Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

被引：40

作者：

Kim, I ^{[1
]}

Han, S ^{[1
]}

Kim, H ^{[1
]}

Lee, J ^{[1
]}

Choi, B ^{[1
]}

Hwang, S ^{[1
]}

Ahn, D ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.

引用

页码：111 / 114

页数：4