Crystallization behavior of bulk amorphous Se-Sb-In system

被引：59

作者：

Kaur, G ^{[1
]}

Komatsu, T ^{[1
]}

机构：

[1] Osaka City Univ, Fac Sci, Dept Phys, Osaka 558, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2001年 / 36卷 / 18期

关键词：

D O I：

10.1023/A:1017951307399

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work crystallization behavior of the amorphous Se90-x Sb10Inx (0 less than or equal to x less than or equal to 15) system has been investigated using Differential Scanning Calorimetry (DSC). The DSC data was taken at different heating rates varying from 1 degreesC/min to 90 degreesC/min. From the heating rate dependence of the crystallization temperature, the activation energy for crystallization has been determined using the Kissinger equation and Matusitas equation for non-isothermal crystallization of materials. The effect of addition of In to the Se-Sb system on the dimensionality of crystal growth has been investigated. (C) 2001 Kluwer Academic Publishers.

引用

页码：4531 / 4533

页数：3

共 13 条

[1] ERASING CHARACTERISTICS AND CRYSTALLIZATION PROCESS OF GESBTE PHASE-CHANGE OPTICAL DISK MEDIA AT VERY FAST LINEAR VELOCITIES [J].