Ion irradiation hardening of C60 thin films

被引：9

作者：

Foerster, CE

Lepienski, CM

Serbena, FC

Zawislak, FC

机构：

[1] UFPR, Dept Fis, Lab Propriedades Nanomecan, BR-81531990 Curitiba, Parana, Brazil

[2] UEPG, Dept Fis, BR-84031510 PontaGrossa, Brazil

[3] UFRGS, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

THIN SOLID FILMS | 1999年 / 340卷 / 1-2期

关键词：

fullerenes; ion implantation; thin films; hardness; nanoindentation;

D O I：

10.1016/S0040-6090(98)01258-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nanoindentation technique is used to measure the hardness and the Young's modulus of ion irradiated C-60 films, 70 nm thick, deposited on a Silicon substrate. An increase of hardness from 1.3 GPa for the pristine sample to 10 GPa after irradiation with 800 keV Bi+ and N2+ ions was observed. The Young's modulus also increases from 60-150 GPa after the irradiation. The results are discussed in terms of the damage and amorphization produced as consequences of the electronic and nuclear energy transference due to the irradiation. (C) 1999 Elsevier Science S.A. All rights reserved.

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收藏

页码：201 / 204

页数：4

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