Scanning probe microscopy study of exfoliated oxidized graphene sheets

被引：178

作者：

Pandey, D. ^{[1
,2
]}

Reifenberger, R. ^{[1
,2
]}

Piner, R. ^{[3
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Brick Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

来源：

SURFACE SCIENCE | 2008年 / 602卷 / 09期

基金：

美国国家航空航天局;

关键词：

atomic force microscopy; lateral force microscopy; scanning tunneling microscopy; scanning tunneling spectroscopy; highly oriented pyrolitic graphite; oxidized graphene (OG);

D O I：

10.1016/j.susc.2008.02.025

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Exfoliated oxidized graphene (OG) sheets, suspended in an aqueous solution, were deposited on freshly cleaved HOPG and studied by ambient AFM and UHV STM. The AFM images revealed oxidized graphene sheets with a lateral dimension of similar to 5-10 mu m. The oxidized graphene sheets exhibited different thicknesses and were found to conformally coat the HOPG substrate. Wrinkles and folds induced by the deposition process were clearly observed. Phase imaging and lateral force microscopy showed distinct contrast between the oxidized graphene and the underlying HOPG substrate. The UHV STM studies of oxidized graphene revealed atomic scale periodicity showing a (0.273 +/- 0.008) nm x (0.406 +/- 0.013) nm unit cell over distances spanning few nanometers. This periodicity is identified with oxygen atoms bound to the oxidized graphene sheet. I(V) data were taken from oxidized graphene sheets and compared to similar data obtained from bulk HOPG. The dI/dV data from oxidized graphene reveals a reduction in the local density of states for bias voltages in the range of +/- 0.1 V. Published by Elsevier B.V.

引用

页码：1607 / 1613

页数：7

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