Doped semiconductor nanomaterials

被引：75

作者：

Chen, XB ^{[1
]}

Lou, YB ^{[1
]}

Dayal, S ^{[1
]}

Qiu, XF ^{[1
]}

Krolicki, R ^{[1
]}

Burda, C ^{[1
]}

Zhao, CF ^{[1
]}

Becker, J ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Chem, Ctr Chem Dynam & Nanomat Res, Cleveland, OH 44106 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2005年 / 5卷 / 09期

关键词：

doped nanomaterials; CdTe; CdSe; Cds; TiO2; silicon; ultrafast dynamics; electronic properties;

D O I：

10.1166/jnn.2005.310

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The development and properties of doped nanomaterials including doped titanium dioxide, doped silicon, and doped cadmium telluride are reviewed, as well as their ultrafast dynamics. Doping nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photoelectrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by doping different elements. The materials can be engineered towards specific applications through careful selection of the dopants.

引用

页码：1408 / 1420

页数：13

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