Charge state of copper-silicide precipitates in silicon and its application to the understanding of copper precipitation kinetics

被引：20

作者：

Istratov, AA ^{[1
]}

Vyvenko, OF ^{[1
]}

Flink, C ^{[1
]}

Heiser, T ^{[1
]}

Hieslmair, H ^{[1
]}

Weber, ER ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USA

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II | 1998年 / 510卷

关键词：

D O I：

10.1557/PROC-510-313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is discussed.

引用

页码：313 / 318

页数：4