Subthreshold analysis of an MOS analog switch

被引：18

作者：

Aghtar, S

Haslett, JW

Trofimenkoff, FN

机构：

[1] Department of Electrical and Computer Engineering, University of Calgary, Calgary

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.554798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors.

引用

页码：89 / 96

页数：8

共 11 条

[1]

[Anonymous], ADV ENG MATH

[2] WEAK INVERSION CHARGE INJECTION IN ANALOG MOS SWITCHES [J].