Controlling oxidation states in uranium oxides through epitaxial stabilization

被引：50

作者：

Burrell, Anthony K. ^{[1
]}

McCleskey, Thomas M.

Shukla, Piyush

Wang, Haiyan

Durakiewicz, Tomasz

Moore, David P.

Olson, Clifford G.

Joyce, John J.

Jia, Quanxi

机构：

[1] Los Alamos Natl Lab, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[4] Los Alamos Natl Lab, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

[5] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[6] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 21期

关键词：

D O I：

10.1002/adma.200701157

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have demonstrated that oxidation states in uranium-oxides such as UO2 and U3O8 can be controlled through epitaxial stabilization by growing single-crystal-like films. We have further shown that the growth of polymorphic uranium oxides is feasible by using different substrates with appropriate in-plane lattice parameters. The clearly improved stability of epitaxial uranium-oxides illustrates the significance of crystal lattice pinning on the control of surface chemistry of materials.

引用

页码：3559 / +

页数：6

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