A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment

被引：31

作者：

Tsai, Chih-Tsung ^{[1
]}

Chang, Ting-Chang ^{[2
,6
]}

Kin, Kon-Tsu ^{[3
]}

Liu, Po-Tsun ^{[4
,5
]}

Yang, Po-Yu ^{[4
,5
]}

Weng, Chi-Feng ^{[2
]}

Huang, Fon-Shan ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Energy & Environm Res Labs, Hsinchu 300, Taiwan

[4] Natl Tsing Hua Univ, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Tsing Hua Univ, Display Inst, Hsinchu 300, Taiwan

[6] Natl Sun Yat Sen Univ, Inst Elect Opt Engn, Kaohsiung 804, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2844496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the dielectric properties of sputter-deposited hafnium oxide (HfO(2)) films, the supercritical CO(2) (SCCO(2)) fluid technology is introduced as a low temperature treatment. The ultrathin HfO(2) films were deposited on p-type (100) silicon wafer by dc sputtering at room temperature and subsequently treated with SCCO(2) fluids at 150 degrees C to diminish the traps in the HfO(2) films. After SCCO(2) treatment, the interfacial parasitic oxide between the Si substrate and HfO(2) layer is only about 5 A, and the oxygen content of the HfO(2) films apparently increased. From current-voltage (I-V) and capacitance-voltage (C-V) measurements, the leakage current density of the SCCO(2)-treated HfO(2) films is repressed from 10(-2) to 10(-7) A/cm(2) at electric field=3 MV/cm due to the reduction of traps in the HfO(2) films. The equivalent oxide thickness also obviously decreased. Besides, the efficiency of terminating traps is relative to the pressure of the SCCO(2) fluids. (C) 2008 American Institute of Physics.

引用

页数：6

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