Ferroelectric properties of pulsed laser deposited Ba(Zr0.15Ti0.85)O3 thin films

被引：37

作者：

James, AR ^{[1
]}

Prakash, C ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 54, India

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1646751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Ba(Zr0.15Ti0.85)O-3 were crystallized in situ at several different oxygen background pressures and temperatures. The optimal temperature and pressure for obtaining films with smooth surface morphology and good electrical properties was found to be 675degreesC and 300 mTorr, respectively. Films grown at this temperature were found to have a P-r of 3.31 muC/cm(2) and an E-c of 93.5 kV/cm. Low field dielectric measurements and C-V measurements were performed in order to study the dielectric behavior of the films. A tunability of similar to45% was recorded on the films. (C) 2004 American Institute of Physics.

引用

页码：1165 / 1167

页数：3

共 9 条

[1] DIFFUSE FERROELECTRIC PHASE-TRANSITIONS IN BA(TI1-YZRY)O3 CERAMICS [J].