Quantized transport in graphene p-n junctions in a magnetic field

被引:254
作者
Abanin, D. A. [1 ]
Levitov, L. S. [1 ]
机构
[1] MIT, Dept Phys, Ctr Mat Sci & Engn, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
D O I
10.1126/science.1144672
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Recent experimental work on locally gated graphene layers resulting in p-n junctions has revealed the quantum Hall effect in their transport behavior. We explain the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime, the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot-noise plateaus similar to those of conductance, whereas in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle/hole interplay manifest in mode mixing and noise in the bipolar regime.
引用
收藏
页码:641 / 643
页数:3
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