Band parameters for III-V compound semiconductors and their alloys

被引:6228
作者
Vurgaftman, I
Meyer, JR
Ram-Mohan, LR
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Worcester Polytech Inst, Worcester, MA 01609 USA
关键词
D O I
10.1063/1.1368156
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. (C) 2001 American Institute of Physics.
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页码:5815 / 5875
页数:61
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