Scaling Theory for Percolative Charge Transport in Disordered Molecular Semiconductors

被引：103

作者：

Cottaar, J. ^{[1
]}

Koster, L. J. A. ^{[2
]}

Coehoorn, R. ^{[1
,3
]}

Bobbert, P. A. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 13期

关键词：

HOPPING CONDUCTIVITY; SYSTEMS;

D O I：

10.1103/PhysRevLett.107.136601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a scaling theory for charge transport in disordered molecular semiconductors that extends percolation theory by including bonds with conductances close to the percolating one in the random-resistor network representing charge hopping. A general and compact expression is given for the charge mobility for Miller-Abrahams and Marcus hopping on different lattices with Gaussian energy disorder, with parameters determined from numerically exact results. The charge-concentration dependence is universal. The model-specific temperature dependence can be used to distinguish between the hopping models.

引用

页数：4

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