Comparison of sol-gel and ion beam deposited MoO3 thin film gas sensors for selective ammonia detection

被引:218
作者
Prasad, AK [1 ]
Kubinski, DJ
Gouma, PI
机构
[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY USA
[2] Ford Sci Res Lab, Dearborn, MI USA
关键词
MoO3; sensor; processing; microstructure; selectivity; oxide polymorphism;
D O I
10.1016/S0925-4005(03)00336-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper presents a comparative study of the gas-sensing behavior of MoO3 thin films prepared by ion beam deposition and sol-gel techniques, respectively. The sensing response of these films to ammonia in the presence of interfering gases (such as NO2) is assessed. The microstructural characteristics of the sensing materials prepared by these two techniques are determined using electron microscopy and microanalysis techniques. MoO3 is shown to be highly sensitive to ammonia, and the sensitivity depends on processing. The sensing properties of MoO3 thin films and the origin of the p-n-type transition occurring in sol-gel processed films are correlated with the type of the MoO3 polymorph(s) used for sensing. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:25 / 30
页数:6
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