Crystal structure of SiH4 at high pressure

被引:64
作者
Degtyareva, Olga
Martinez Canales, Miguel
Bergara, Aitor
Chen, Xiao-Jia
Song, Yang
Struzhkin, Viktor V.
Mao, Ho-kwang
Hemley, Russell J.
机构
[1] Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USA
[2] Univ Edinburgh, Sch Phys, Ctr Sci Extreme Condit, Edinburgh EH9 3JZ, Midlothian, Scotland
[3] Euskal herriko Unibertsitatea, Zientzia Fakultatea, Mat Kondentsatuaren Fis, Bilbao 48080, Spain
[4] UPV, EHU, CSIC, Donostia Int Phys Ctr, Donostia San Sebastian 20080, Spain
[5] UPV, EHU, CSIC, Ctr Mixto, Donostia San Sebastian 20080, Spain
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 06期
关键词
D O I
10.1103/PhysRevB.76.064123
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystal structure of a high-pressure phase of silane (SiH4), observed between 10 and 25 GPa, is solved using powder synchrotron x-ray diffraction and shown to be of the SnBr4 type. The phase is an insulating molecular solid with a monoclinic unit cell containing four tetrahedrally bonded molecules, space group P2(1)/c. Ab initio calculations show the SnBr4-type structure to be favored in this pressure range relative to other recently proposed structures. The fit of the pressure dependence of volume to the Birch-Murnagham equation of state gives the following parameters at ambient pressure if K-0(') is fixed to 4: V-0=250(9) A(3) and K-0=7.8(9) GPa for the experimental data, and V-0=255(2) A(3) and K-0=6.1(2) GPa for the data obtained from ab initio calculations.
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页数:4
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