On the origin of magnetoresistance in ferromagnetic perovskite structures

被引：23

作者：

Zhang, SF

Yang, Z

机构：

[1] Physics Department, New York University, New York, NY 10003

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.361458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the presence of a nonuniform distribution of spin interactions in ferromagnetic perovskite materials, thermally activated magnetic domains appear. These domains are different from ordinary static ferromagnetic domains, rather their structures depend on temperature, magnetic field, and details of the distribution of magnetic interactions. Due to the half-metallic nature of these materials, magnetic domain boundaries contribute significantly to their electrical resistivity. Magnetoresistive effects are discussed within this framework. (C) 1996 American Institute of Physics.

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页码：7398 / 7400

页数：3

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