Slow transient photoresponse in Schottky-type junctions based on poly(4,4"-dipenthoxy-3′-octyl-2,2′:5′,2"-terthiophene)

被引：3

作者：

Camaioni, N ^{[1
]}

Casalbore-Miceli, G ^{[1
]}

Martelli, A ^{[1
]}

机构：

[1] CNR, Ist Frae, I-40129 Bologna, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.1358324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the slow transient phenomena observed, under continuous illumination, in the response of the sandwich-type structure indium-tin-oxide/poly(4,4"-dipenthoxy-3'-octyl-2,2':5',2"-terthiophene)/Al. The analysis of the transient component of the open-circuit voltage revealed that recombination processes are greatly enhanced under illumination, limiting the performance of this kind of devices. (C) 2001 American Institute of Physics.

引用

页码：5488 / 5490

页数：3

共 8 条

[1]

CRISTEA P, 1984, P INT C PHOT OPT PRO, P178

[2] Measurements of transient photocapacitance and photocurrent on MOVPE-grown Au/ZnSe/GaAs heterostructures [J].