Influence of precursor solution coating parameters on structural and dielectric properties of PZT thick films

被引:2
作者
Ahn, Byeong-Lib [2 ]
Lee, Ju [2 ]
Park, Sang-Man [1 ]
Lee, Sung-Gap [1 ]
机构
[1] Gyeongsang Natl univ, Dept Ceram Engn, Engn Res Inst, i Cube Ctr, Gyeongnam 600701, South Korea
[2] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
关键词
Thick Film; Leakage Current Density; Glass Frit; Relative Dielectric Constant; Rhombohedral Phase;
D O I
10.1007/s10853-007-2253-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol-coating process to the normal screen-printing process to obtain a good densification. The screen-printing procedure was repeated four times to form PZT(70/30) thick films, and then PZT(30/70) precursor solution was spin-coated on the PZT thick films. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The thickness of all thick films was approximately 75-80 mu m. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 656 and 1.2%, respectively. The remanent polarization increased and coercive field decreased with increasing the number of sol coatings and the values of the PZT-6 thick films were 28.3 mu C/cm(2) and 13.1 kV/cm, respectively. Leakage current density of PZT-6 thick films was 2.4 x 10(-9)A/cm(2) at 100 kV/cm.
引用
收藏
页码:3408 / 3411
页数:4
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